Chief Technology Officer,  Clas-SiC Wafer Fab


David has a strong background in silicon and silicon carbide (SiC) process integration. He started his career in 1993 in silicon process engineering at Hughes Microelectronics/Raytheon Systems, moving during his career into process integration and device engineering.

In 2004, David moved into SiC process integration and has experience across many SiC device technologies including various diodes, MOSFET’s, JFET’s, BJT’s, and MESFET’s.

In 2017, David left Raytheon and was part of the founding management team which started up Clas-SiC Wafer Fab, where David led the effort to qualify Clas-SiC’s SiC Diodes and MOSFET’s.

David has a first class honours degree in Electrical and Electronic Engineering and a Post Graduate Certificate in Advanced Silicon Processing and Manufacturing Technologies. He has authored or co-authored more than 10 SiC processing papers, is joint inventor of four SiC related patents. David is now Chief Technology Officer at Clas-SiC, with oversight of Clas-SiC’s technology roadmap and technical direction.

Presentation: Wide Bandgap Power Semiconductors: key to enabling energy efficient power conversion

Wide bandgap power semiconductors such as Silicon Carbide and Gallium Nitride are key to enabling energy efficient power conversion, from low voltage applications such as laptop chargers, all the way up to high voltage applications such as solid state transformers for grid transmission. After a brief introduction to Clas-SiC Wafer Fab, this presentation will lightly review some of these power conversion applications, before discussing in more depth some higher voltage SiC applications that Clas-SiC have been working on. Finally, some future perspectives will be offered, both on device cost and technology trends.